Metal oxide resistive switching memory and method for manufacturing same

US8735245B2 · kind B2 · utility

Assignee

• INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES · CN

Inventors

• Hangbing Lv · Beijing, CN
• Ming Liu · Beijing, CN
• Shibing Long · Beijing, CN
• Qi Liu · New Taipei, TW
• Yanhua Wang · Beijing, CN
• Jiebin Niu · Beijing, CN

Key dates

• Filing date: Jun 30, 2011
• Grant date: May 27, 2014
• Expiry date: Feb 29, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8836

Abstract

The present disclosure relates to the microelectronics field, and particularly, to a metal oxide resistive switching memory and a method for manufacturing the same. The method may comprise: forming a W-plug lower electrode above a MOS device; sequentially forming a cap layer, a first dielectric layer, and an etching block layer on the W-plug lower electrode; etching the etching block layer, the first dielectric layer, and the cap layer to form a groove for a first level of metal wiring; sequentially forming a metal oxide layer, an upper electrode layer, and a composite layer of a diffusion block layer/a seed copper layer/a plated copper layer in the groove for the first level of metal wiring; patterning the upper electrode layer and the composite layer by CMP, to form a memory cell and the first level of metal wiring in the groove in the first dielectric layer; and performing subsequent processes to complete the metal oxide resistive switching memory. According to the present disclosure, the manufacture process can be simplified, without incorporating additional exposure steps in the standard process, resulting in advantages such as reduced cost.