Semiconductor device and information processing system including the same
US8735288B2 · kind B2 · utility
8Cited by
38References
16Claims
0Family size
Inventors
Key dates
| Filing date | Nov 16, 2013 |
| Grant date | May 27, 2014 |
| Priority date | — |
| Expiry date | Nov 16, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a semiconductor device includes forming first and second bumps on a semiconductor substrate, forming first and second penetration electrodes penetrating the semiconductor substrate, forming a first conductive structure making a first electrical path between the first bump and the first penetration electrode, and forming a second conductive structure making a second electrical path between the second bump and the second penetration electrode, the second conductive structure being smaller in resistance value than the first conductive structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.