Amorphous group III-V semiconductor material and preparation thereof
US8735290B2 · kind B2 · utility
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16Claims
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Key dates
| Filing date | Nov 19, 2008 |
| Grant date | May 27, 2014 |
| Priority date | — |
| Expiry date | Sep 29, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A reactive evaporation method for forming a group III-V amorphous material attached to a substrate includes subjecting the substrate to an ambient pressure of no greater than 0.01 Pa, and introducing active group-V matter to the surface of the substrate at a working pressure of between 0.05 Pa and 2.5 Pa, and group III metal vapor, until an amorphous group III-V material layer is formed on the surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.