Patent · US Active

Organic thin film transistors

US8735871B2 · kind B2 · utility

1Cited by
3References
21Claims
0Family size

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Key dates

Filing dateFeb 25, 2009
Grant dateMay 27, 2014
Priority date
Expiry dateMay 26, 2030

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10K10/466

Abstract

An organic thin film transistor comprising: a substrate; a source electrode and a drain electrode disposed over the substrate with a channel region therebetween; a layer of organic semiconductor disposed in the channel region; a gate electrode; and a gate dielectric disposed between the layer of organic semiconductor and the gate electrode, wherein the gate dielectric comprises a cross-linked polymer and a fluorine containing polymer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.