Organic thin film transistors
US8735871B2 · kind B2 · utility
1Cited by
3References
21Claims
0Family size
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Key dates
| Filing date | Feb 25, 2009 |
| Grant date | May 27, 2014 |
| Priority date | — |
| Expiry date | May 26, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K10/466
Abstract
An organic thin film transistor comprising: a substrate; a source electrode and a drain electrode disposed over the substrate with a channel region therebetween; a layer of organic semiconductor disposed in the channel region; a gate electrode; and a gate dielectric disposed between the layer of organic semiconductor and the gate electrode, wherein the gate dielectric comprises a cross-linked polymer and a fluorine containing polymer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.