Electronic device including graphene thin film and methods of fabricating the same
US8735895B2 · kind B2 · utility
3Cited by
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14Claims
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Key dates
| Filing date | Oct 12, 2010 |
| Grant date | May 27, 2014 |
| Priority date | — |
| Expiry date | Jun 24, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/20
Abstract
Provided are an electronic device and methods of fabricating the same, the electronic device include a device-substrate, a stacked structure, and an electrode. The stacked structure includes a graphene thin film between a first insulator and a second insulator. The electrode is disposed over the stacked structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.