Semiconductor device
US8735904B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 8, 2012 |
| Grant date | May 27, 2014 |
| Priority date | — |
| Expiry date | Feb 8, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
A semiconductor device includes a main body made of a GaN-based semiconductor material, and at least one electrode structure. The electrode structure includes an ohmic contact layer that is formed on the main body, a buffer layer that is formed on the ohmic contact layer opposite to the main body, and a circuit layer that is made of a copper-based material and that is formed on the buffer layer opposite to the ohmic contact layer. The ohmic contact layer is made of a material selected from titanium, aluminum, nickel, and alloys thereof. The buffer layer is made of a material different from the material of the ohmic contact layer and selected from titanium, tungsten, titanium nitride, tungsten nitride, and combinations thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.