Method for producing aluminum nitride crystals
US8735905B2 · kind B2 · utility
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8Claims
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Key dates
| Filing date | Jul 14, 2011 |
| Grant date | May 27, 2014 |
| Priority date | — |
| Expiry date | Jul 14, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided is a method for producing inexpensive and high-quality aluminum nitride crystals. Gas containing N atoms is introduced into a melt of a Ga—Al alloy, whereby aluminum nitride crystals are made to epitaxially grow on a seed crystal substrate in the melt of the Ga—Al alloy. A growth temperature of aluminum nitride crystals is set at not less than 1000 degrees C. and not more than 1500 degrees C., thereby allowing GaN to be decomposed into Ga metal and nitrogen gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.