Nonvolatile semiconductor memory device and method for manufacturing same
US8735965B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2012 |
| Grant date | May 27, 2014 |
| Priority date | — |
| Expiry date | Mar 31, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0413
Abstract
According to one embodiment, a nonvolatile semiconductor memory device includes a substrate, an electrode layer provided above the substrate, a first insulating layer provided on the electrode layer, a stacked body provided on the insulating layer, a memory film, a channel body layer, a channel body connecting portion and a second insulating layer. The stacked body has a plurality of conductive layers and a plurality of insulating film alternately stacked on each other. The memory film is provided on a sidewall of each of a pair of holes penetrating the stacked body in a direction of stacking the stacked body. The channel body layer is provided on an inner side of the memory film in each of the pair of the holes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.