Shifting cell voltage based on grouping of solid-state, non-volatile memory cells
US8737133B2 · kind B2 · utility
12Cited by
20References
14Claims
0Family size
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Key dates
| Filing date | Oct 18, 2011 |
| Grant date | May 27, 2014 |
| Priority date | — |
| Expiry date | Apr 6, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C29/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Cells of a solid-state, non-volatile memory are assigned to one of a plurality of groups. Each group is defined by expected symbols stored in the cells in view of actual symbols read from the cells. Based on cell counts within the groups, it can be determined that a shift in a reference voltage will reduce a collective bit error rate of the cells. The shift can be applied to data access operations affecting the cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.