Semiconductor laser
US8737446B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 14, 2011 |
| Grant date | May 27, 2014 |
| Priority date | — |
| Expiry date | May 22, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/50
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser includes a gain region; a distributed Bragg reflector (DBR) region including a diffraction grating; an end facet facing the DBR region with the gain region arranged therebetween; a first ring resonator including a first ring-like waveguide and a first optical coupler; a second ring resonator including a second ring-like waveguide and a second optical coupler; and an optical waveguide that is optically coupled to the end facet and extending in a predetermined optical-axis direction. The first and second ring resonators are optically coupled to the optical waveguide through the first and second optical couplers, respectively. Also, the DBR region, the gain region, and the end facet constitute a laser cavity. Further, the first ring resonator has a free spectral range different from a free spectral range of the second ring resonator.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.