Non-volatile semiconductor memory device and write-in method thereof
US8738836B2 · kind B2 · utility
5Cited by
11References
8Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 11, 2008 |
| Grant date | May 27, 2014 |
| Priority date | — |
| Expiry date | Mar 30, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2216/14
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A non-volatile semiconductor memory device, comprising: a non-volatile memory array, storing multi-values by setting a plurality of different threshold voltages for each memory cell, and a control circuit, controlling a write-in operation to the memory cell array. When data have been written into the memory cell, the control circuit selects an adjacent word line, uses an erasing level to perform write-in which is weaker than the data write-in, and verifies soft programming of the amount of one page, such that a narrow-banded erasing level distribution is realized in an adjacent memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.