Patent · US Active

Sapphire substrates and methods of making same

US8740670B2 · kind B2 · utility

2Cited by
22References
17Claims
0Family size

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Key dates

Filing dateMay 15, 2012
Grant dateJun 3, 2014
Priority date
Expiry dateMay 15, 2032

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T428/24355
  • WIPO fieldMachine tools
  • WIPO sectorMechanical engineering

Abstract

A sapphire substrate includes a generally planar surface having a crystallographic orientation selected from the group consisting of a-plane, r-plane, m-plane, and c-plane orientations, and having a nTTV of not greater than about 0.037 μm/cm2, wherein nTTV is total thickness variation normalized for surface area of the generally planar surface, the substrate having a diameter not less than about 9.0 cm.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.