Apparatus and methods for deposition reactors
US8741062B2 · kind B2 · utility
406Cited by
5References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 22, 2008 |
| Grant date | Jun 3, 2014 |
| Priority date | — |
| Expiry date | Jan 23, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T137/6416
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus, such as an ALD (Atomic Layer Deposition) apparatus, including a precursor source configured for depositing material on a heated substrate in a deposition reactor by sequential self-saturating surface reactions. The apparatus includes an in-feed line for feeding precursor vapor from the precursor source to a reaction chamber and a structure configured for utilizing heat from a reaction chamber heater for preventing condensation of precursor vapor into liquid or solid phase between the precursor source and the reaction chamber. Also various other apparatus and methods are presented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.