Method of manufacturing nanoimprint stamp
US8741162B2 · kind B2 · utility
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2References
18Claims
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Key dates
| Filing date | Nov 5, 2013 |
| Grant date | Jun 3, 2014 |
| Priority date | — |
| Expiry date | Nov 5, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0015
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Methods of manufacturing a nanoimprint stamp are provided. The method may include forming a pattern on a surface of a master substrate, depositing an etch barrier layer on a surface of a stamp substrate, coating a photoresist on one of the surfaces of the master substrate and the stamp substrate on which an etch barrier layer is formed, forming a photoresist pattern by pressing the master substrate against the stamp substrate, forming a hard mask by etching the etch barrier layer using the photoresist pattern, and etching the stamp substrate using the hard mask as an etch mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.