Atomic layer deposition of quaternary chalcogenides
US8741386B2 · kind B2 · utility
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Key dates
| Filing date | Sep 28, 2012 |
| Grant date | Jun 3, 2014 |
| Priority date | — |
| Expiry date | Nov 22, 2032 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/56
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods and systems are provided for synthesis and deposition of chalcogenides (including Cu2ZnSnS4). Binary compounds, such as metal sulfides, can be deposited by alternating exposures of the substrate to a metal cation precursor and a chalcogen anion precursor with purge steps between.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.