Hardmask composition, method of forming a pattern using the same, and semiconductor integrated circuit device including the pattern
US8741539B2 · kind B2 · utility
4Cited by
13References
16Claims
0Family size
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Key dates
| Filing date | Sep 23, 2011 |
| Grant date | Jun 3, 2014 |
| Priority date | — |
| Expiry date | Nov 12, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0332
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A hard mask composition, a method of forming a pattern, and a semiconductor integrated circuit device, the hard mask composition including a solvent; and a compound, the compound including a structural unit represented by the following Chemical Formula 1:
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.