Method of manufacturing semiconductor light emitting device and mask for application of paste used therefor
US8741675B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 1, 2012 |
| Grant date | Jun 3, 2014 |
| Priority date | — |
| Expiry date | Apr 7, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/831
Abstract
Provided are a mask for an application of paste and a method of manufacturing a semiconductor light emitting device by using the same. The method includes preparing a light emitting structure including first and second conductive semiconductor layers and an active layer disposed therebetween, which has at least one electrode formed on a surface of the light emitting structure; disposing a mask having an open part exposing a portion of the surface of the light emitting structure therethrough and a recess part corresponding the electrode in a region thereof on a surface of the light emitting structure; and applying wavelength conversion material-containing paste to the surface of the light emitting structure through the open part.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.