Metal-oxide-semiconductor high electron mobility transistors and methods of fabrication
US8741705B2 · kind B2 · utility
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8References
20Claims
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Key dates
| Filing date | Jun 28, 2013 |
| Grant date | Jun 3, 2014 |
| Priority date | — |
| Expiry date | Jun 28, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating Group III-V semiconductor metal oxide semiconductor (MOS) and III-V MOS devices are described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.