Reacted layer for improving thickness uniformity of strained structures
US8741726B2 · kind B2 · utility
2Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 1, 2011 |
| Grant date | Jun 3, 2014 |
| Priority date | — |
| Expiry date | Jan 23, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods are disclosed of forming and removing a reacted layer on a surface of a recess to provide mechanisms for improving thickness uniformity of a semiconductor material formed in the recess. The improved thickness uniformity in turn improves the uniformity of device performance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.