III nitride epitaxial substrate and deep ultraviolet light emitting device using the same
US8742396B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 11, 2013 |
| Grant date | Jun 3, 2014 |
| Priority date | — |
| Expiry date | Jan 11, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A III nitride epitaxial substrate which makes it possible to obtain a deep ultraviolet light emitting device with improved light output power is provided. A III nitride epitaxial substrate includes a substrate, an AlN buffer layer, a first superlattice laminate, a second superlattice laminate and a III nitride laminate in this order. The III nitride laminate includes an active layer including an AlαGa1-αN (0.03≦α) layer. The first superlattice laminate includes AlaGa1-aN layers and AlbGa1-bN (0.9<b≦1) layers which are alternately stacked, where α(alpha)<a and a<b. The second superlattice laminate includes repeated layer sets each having an AlxGa1-xN layer, an AlyGa1-yN layer, and an AlzGa1-zN (0.9<z≦1) layer, where α(alpha)<x and x<y<z.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.