Pixel structure and manufacturing method thereof
US8742437B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 31, 2013 |
| Grant date | Jun 3, 2014 |
| Priority date | — |
| Expiry date | Jul 31, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/136227
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A pixel structure including a substrate, a color filter layer, a conductive light-shielding layer, a buffer layer, a scan line, a data line, an active device, and a pixel electrode is provided. The substrate has a pixel region. The color filter layer is disposed corresponding to the pixel region. The conductive light-shielding layer is disposed corresponding to the periphery of the pixel region. The buffer layer covers the conductive light-shielding layer and color filter layer. The scan line and the data line are disposed on the buffer layer. The active device is disposed on the buffer layer and electrically connected to the scan line and data line. The pixel electrode is disposed on the buffer layer and electrically connected to the active device, wherein an overlapping area between the pixel electrode and the conductive light-shielding layer constitutes a storage capacitor. A method for manufacturing the pixel structure is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.