Semiconductor devices having vertical channel transistors and methods for fabricating the same
US8742493B2 · kind B2 · utility
7Cited by
3References
12Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 31, 2011 |
| Grant date | Jun 3, 2014 |
| Priority date | — |
| Expiry date | Nov 14, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/378
Abstract
A semiconductor device has a plurality of vertical channels extending upright on a substrate, a plurality of bit lines extending among the vertical channels, a plurality of word lines which include a plurality of gates disposed adjacent first sides of the vertical channels, respectively, and a plurality of conductive elements disposed adjacent second sides of the vertical channels opposite the first sides. The conductive elements can provide a path to the substrate for charge carriers which have accumulated in the associated vertical channel to thereby mitigate a so-called floating effect.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.