Semiconductor device and method of forming the same
US8742494B2 · kind B2 · utility
12Cited by
0References
20Claims
0Family size
Inventor
Key dates
| Filing date | Mar 8, 2012 |
| Grant date | Jun 3, 2014 |
| Priority date | — |
| Expiry date | Mar 8, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/34
Abstract
A semiconductor device includes a semiconductor substrate having a groove and an active region adjacent to the groove; a buried gate electrode in the groove; and a capacitor contact including a first portion and a second portion over the first portion. The first portion is greater in horizontal dimension than the second portion. The first portion has a bottom surface that is in contact with an upper surface of the active region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.