Circuit board, semiconductor device, process for manufacturing circuit board and process for manufacturing semiconductor device
US8742568B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 24, 2011 |
| Grant date | Jun 3, 2014 |
| Priority date | — |
| Expiry date | Feb 24, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2201/09136
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A circuit board (1) exhibits an average coefficient of thermal expansion (A) of the first insulating layer (21) in the direction along the substrate surface in a temperature range from 25 degrees C. to its glass transition point of equal to or higher than 3 ppm/degrees C. and equal to or lower than 30 ppm/degrees C. Further, an average coefficient of thermal expansion (B) of the second insulating layer (23) in the direction along the substrate surface in a temperature range from 25 degrees C. to its glass transition point is equivalent to an average coefficient of thermal expansion (C) of the third insulating layer (25) in the direction along the substrate surface in a temperature range from 25 degrees C. to its glass transition point. (B) and (C) are larger than (A), and a difference between (A) and (B) and a difference between (A) and (C) are equal to or higher than 5 ppm/degrees C. and equal to or lower than 35 ppm/degrees C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.