MOSFET with temperature sense facility
US8742825B2 · kind B2 · utility
2Cited by
4References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 14, 2006 |
| Grant date | Jun 3, 2014 |
| Priority date | — |
| Expiry date | Aug 4, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/48463
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A transistor (1) has a FET (2) and a temperature sensing diode (4) integrated within it. Gate drive circuit (12) is arranged to switch off FET (2) and in this case biasing circuit (14) drives a constant current through the diode (4). The voltage across the diode (4) is measured by voltage sensor (15) which provides a measure of the temperature of the FET.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.