Apparatus and method for diamond film growth
US8747963B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 23, 2009 |
| Grant date | Jun 10, 2014 |
| Priority date | — |
| Expiry date | Apr 29, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32192
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus and methods for forming a diamond film, are provided. An example of an apparatus for forming a diamond film includes an electrodeless microwave plasma reactor having a microwave plasma chamber configured to contain a substrate and to contain a reactant gas excited by microwaves to generate a microwave plasma discharge. Gas injection ports extend through an outer wall of the plasma chamber at a location upstream of the plasma discharge and above the substrate. Gas jet injection nozzles interface with the gas injection ports and are configured to form a directed gas stream of reactant gas having sufficient kinetic energy to disturb a boundary layer above an operational surface of the substrate to establish a convective transfer of the film material to the operational surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.