Method of fabricating a nonvolatile memory device
US8748286B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 4, 2011 |
| Grant date | Jun 10, 2014 |
| Priority date | — |
| Expiry date | Jul 16, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
Abstract
A method of fabricating a nonvolatile memory device includes providing a substrate having active regions defined by a plurality of trenches, forming a first isolation layer on the substrate having the plurality of trenches, forming a sacrificial layer on the first isolation layer to fill the trenches, the sacrificial layer including a first region filling lower portions of the trenches and a second region filling portions other than the lower portions, removing the second region of the sacrificial layer, forming a second isolation layer on the first isolation layer and the first region of the sacrificial layer, forming air gaps in the trenches by removing the first region of the sacrificial layer, and removing a portion of the first isolation layer and a portion of the second isolation layer while maintaining the air gaps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.