Method for producing a metal contact structure of a photovoltaic solar cell

US8748310B2 · kind B2 · utility

Assignee

• Fraunhofer-Gesellschaft zur förderung der angewandten Forschung e.V. · DE

Inventors

• Daniel Biro · Glückstadt, DE
• Benjamin Thaidigsmann · Glückstadt, DE
• Florian Clement · Freiburg (Elbe), DE
• Robert Woehl · San Jose, US
• Edgar-Allan Wotke · Berlin, DE

Key dates

• Filing date: Jun 16, 2011
• Grant date: Jun 10, 2014
• Expiry date: Jun 16, 2031

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/50

Abstract

A method for producing a metal contact structure of a photovoltaic solar cell, including: applying an electrically non-conductive insulating layer to a semiconductor substrate, applying a metal contact layer to the insulating layer, and generating a plurality of local electrically conductive connections between the semiconductor substrate and the contact layer right through the insulating layer. The metal contact layer is formed using two pastes containing metal particles: the first paste containing metal particles is applied to local regions, and the second paste containing metal particles is applied covering at least the regions covered with the first paste and partial regions located therebetween. By global heating the semiconductor substrate the first paste penetrates the insulating layer and forms an electrically conductive contact directly with the semiconductor substrate, whereas the second paste does not penetrate the insulating layer and is electrically conductively connected to the semiconductor substrate via the first paste.