Method of manufacturing a semiconductor device including a dielectric structure

US8748317B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Gerhard Schmidt · Graz, AT
• Daniel Schloegl · Villach, AT
• Marcella Johanna Hartl · Finkenstein, AT
• Philipp Koch · Villach, AT
• Roland Strasser · Fürth, DE

Key dates

• Filing date: Aug 3, 2012
• Grant date: Jun 10, 2014
• Expiry date: Dec 4, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02318
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A dielectric layer is deposited on a working surface of a substrate, wherein the dielectric layer contains or consists of a dielectric polymer. The dielectric layer is partially cured. A portion of the partially cured dielectric layer is removed using a chemical mechanical polishing process. Then the curing of remnant portions of the partially cured dielectric layer is continued to form a dielectric structure. The partially cured dielectric layer shows high removal rates during chemical mechanical polishing. With remnant portions of the dielectric layer provided in cavities, high volume insulating structures can be provided in an efficient manner.