Connection to first metal layer in thin film transistor process

US8748320B2 · kind B2 · utility

Assignee

• Apple Inc. · US

Inventors

• Ming-Chin Hung · Cupertino, US
• Young Bae Park · San Jose, US
• Chun-Yao Huang · Cupertino, US
• Shih Chang Chang · Cupertino, US
• John Z. Zhong · Saratoga, US

Key dates

• Filing date: Sep 27, 2012
• Grant date: Jun 10, 2014
• Expiry date: Sep 27, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D99/00

Abstract

A method of connecting to a first metal layer in a semiconductor flow process. Disclosed embodiments connect to the first metal layer by etching a first portion of a viahole through an etch stop layer and a gate insulation layer to reach a first metal layer, depositing a second metal layer such that the second metal layer contacts the first metal layer within the viahole, and etching a second portion of the viahole through a first passivation layer and an organic layer to reach the second metal layer.