Microwave plasma apparatus and method for materials processing
US8748785B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jan 17, 2008 |
| Grant date | Jun 10, 2014 |
| Priority date | — |
| Expiry date | Aug 23, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H1/30
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A microwave plasma apparatus for processing a material includes a plasma chamber, a microwave radiation source, and a waveguide guiding microwave radiation from the microwave radiation source to the plasma chamber. A process gas flows through the plasma chamber and the microwave radiation couples to the process gas to produce a plasma jet. A process material is introduced to the plasma chamber, becomes entrained in the plasma jet, and is thereby transformed to a stream of product material droplets or particles. The product material droplets or particles are substantially more uniform in size, velocity, temperature, and melt state than are droplets or particles produced by prior devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.