Light emitting device
US8748863B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 15, 2011 |
| Grant date | Jun 10, 2014 |
| Priority date | — |
| Expiry date | Jan 25, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B6/0091
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A light emitting device may include a light emitting structure that includes a first semiconductor layer, a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the active layer includes a light emitting layer adjacent to the second semiconductor layer and that includes a well layer and a barrier layer and a super-lattice layer between the light emitting layer and the first semiconductor layer, the super-lattice layer including at least six pairs of a first layer and a second layer, wherein a composition of the first layer includes indium (In) and the second layer includes indium (In), and the composition of the first layer is different from the composition of the second layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.