Light emitting device
US8748865B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 14, 2012 |
| Grant date | Jun 10, 2014 |
| Priority date | — |
| Expiry date | Aug 14, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/12032
Abstract
Disclosed are a light emitting device, a method of manufacturing the light emitting device, a light emitting device package and a lighting system. The light emitting device includes a first conductive semiconductor layer; an active layer including a quantum well and a quantum barrier and disposed on the first conductive semiconductor layer; and a second conductive semiconductor layer on the active layer. The active layer includes a first quantum well adjacent to the second conductive semiconductor layer, a second quantum well adjacent to the first quantum well, and a first quantum barrier between the first quantum well and the second quantum well. A recombination rate of electron-hole in the second quantum well is higher than the recombination rate of the electron-hole in the first quantum well, and the first quantum well has an energy level higher than the energy level of the second quantum well.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.