SiC semiconductor device having CJFET and method for manufacturing the same
US8748948B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 24, 2011 |
| Grant date | Jun 10, 2014 |
| Priority date | — |
| Expiry date | Jan 1, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/87
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A SiC semiconductor device includes: a SiC substrate made of intrinsic SiC having semi-insulating property; first and second conductive type SiC layers disposed in the substrate; an insulation separation layer made of intrinsic SiC for isolating the first conductive type SiC layer from the second conductive type SiC layer; first and second conductive type channel JFETs disposed in the first and second conductive type SiC layers, respectively. The first and second conductive type channel JFETs provide a complementary junction field effect transistor. Since an electric element is formed on a flat surface, a manufacturing method is simplified. Further, noise propagation at high frequency and current leakage at high temperature are restricted.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.