Multilinear image sensor with charge integration
US8748954B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 2, 2010 |
| Grant date | Jun 10, 2014 |
| Priority date | — |
| Expiry date | Dec 2, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/151
Abstract
The invention relates to linear time-delay and integration sensors (or TDI sensors). According to the invention, adjacent pixels of the same rank comprise, alternately, at least one photodiode and one transfer gate adjacent to the photodiode, the photodiodes comprising a common reference region of a first conductivity type, in which an individual region of opposite conductivity type is formed, itself covered by a individual surface region of the first conductivity type, characterized in that the surface regions of two photodiodes located on either side of a transfer gate are electrically separated so as to be able to be brought to different potentials in order to create potential wells and potential barriers allowing accumulation and transfer of charges as desired.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.