Semiconductor device having resistor formed of a polycrystalline silicon film
US8748988B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 26, 2011 |
| Grant date | Jun 10, 2014 |
| Priority date | — |
| Expiry date | Apr 21, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/47
Abstract
A semiconductor device has a semiconductor substrate, a field insulating film disposed on a surface of the semiconductor substrate, a base insulating film disposed on a surface of the field insulating film, and a resistor disposed on the base insulating film. The resistor is formed of a polycrystalline silicon film and has a resistance region and electrode lead-out regions disposed at both ends of the resistance region. A portion of the base insulating film below the resistance region projects with respect to portions of the base insulating film below the electrode lead-out regions so that a height difference occurs therebetween. The resistance region has a thickness thinner than that of each of the electrode lead-out regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.