High voltage switching device the method for forming thereof
US8748990B2 · kind B2 · utility
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Key dates
| Filing date | Mar 15, 2013 |
| Grant date | Jun 10, 2014 |
| Priority date | — |
| Expiry date | Mar 15, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
A high voltage switching device and associated method of manufacturing, the high voltage switching device having a substrate, an epitaxial layer, a source region, a drain region, a drift region, a gate oxide, a filed oxide, a gate and a snake shaped poly.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.