Resistance-variable memory device and a production method therefor
US8749023B2 · kind B2 · utility
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Key dates
| Filing date | Apr 8, 2010 |
| Grant date | Jun 10, 2014 |
| Priority date | — |
| Expiry date | Apr 8, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
Abstract
Disclosed are a ReRAM, which is a non-volatile memory device, and a production method therefor. A resistance-variable layer, which varies the resistance in accordance with an applied pulse, has a multilayered structure comprising 3 oxide films. Each oxide film consists of an oxide film of the same type as the neighbouring oxide film(s), but the oxygen ratios in the compositions of neighbouring oxide films differ from each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.