Magnetoresistive effect element and magnetic memory
US8750029B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 15, 2011 |
| Grant date | Jun 10, 2014 |
| Priority date | — |
| Expiry date | Nov 29, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a magnetoresistive effect element includes a recording layer including ferromagnetic material with perpendicular magnetic anisotropy to a film surface and a variable orientation of magnetization, a reference layer including ferromagnetic material with perpendicular magnetic anisotropy to a film surface and an invariable orientation of magnetization, a nonmagnetic layer between the recording layer and the reference layer, a first underlayer on a side of the recoding layer opposite to a side on which the nonmagnetic layer is provided, and a second underlayer between the recording layer and the first underlayer. The second underlayer is a Pd film including a concentration of 3×1015 atms/cm2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.