System and methods employing mock thresholds to generate actual reading thresholds in flash memory devices
US8751726B2 · kind B2 · utility
5Cited by
120References
19Claims
0Family size
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Inventor
Key dates
| Filing date | Sep 17, 2008 |
| Grant date | Jun 10, 2014 |
| Priority date | — |
| Expiry date | Aug 10, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F2212/1032
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for reading at least one page within an erase sector of a flash memory device, the method comprising computing at least one mock reading threshold; using the at least one mock reading threshold to perform at least one mock read operation of at least a portion of at least one page within the erase sector, thereby to generate a plurality of logical values; defining a set of reading thresholds based at least partly on the plurality of logical values; and reading at least one page in the erase sector using the set of reading thresholds.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.