Semiconductor single crystal production device and producing method therefor
US8753446B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 13, 2005 |
| Grant date | Jun 17, 2014 |
| Priority date | — |
| Expiry date | Mar 1, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/108
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Evaporated matters and reaction products produced in a furnace can be exhausted without contacting with a graphite crucible and a heater, and an exhaust pipe per se can be maintained at a high temperature to suppress the deposition and condensation of the evaporated matters and reaction products, whereby the clogging of the exhaust pipe is prevented, in addition, a conversion of the exhaust pipes per se into SiC is suppressed to improve the durability of the exhaust pipe, and the change in thermal expansion coefficient is suppressed, whereby a thermal single crystal can be pulled up in high quality. Further, the exhaust pipe is formed of a small number of materials to reduce a production cost. A heat shield (12) made of a heat insulating material is provided outside a heater (6), and a plurality of exhaust pipes (20) are provided between the heater (6) and the heat shield (12). The plurality of exhaust pipes (20) are communicated with a plurality of exhaust ports (8B (22b)) provided at a bottom of a chamber 1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.