Patent · US Active

Method of depositing material using a deposition reactor

US8753716B2 · kind B2 · utility

3Cited by

6References

7Claims

0Family size

Assignee

Picosun Oy · FI

Inventors

Pekka Soininen · Helsinki, FI
Sven Lindfors · Espoo, FI

Key dates

Filing date	Mar 5, 2013
Grant date	Jun 17, 2014
Priority date	—
Expiry date	Mar 5, 2033

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T137/6416
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

A method includes depositing material on a heated substrate in a deposition reactor by sequential self-saturating surface reactions, controlling feeding of precursor vapor from a precursor source to a reaction chamber including the reactor containing the substrate with a first pulsing valve embedded into the precursor source, and conveying inactive gas to a precursor cartridge attached to the precursor source to raise pressure of the precursor cartridge and to ease subsequent flow of a mixture of precursor vapor and inactive gas towards the reaction chamber.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.