Patent · US Active

Process and installation for depositing films onto a substrate

US8753723B2 · kind B2 · utility

1Cited by

2References

9Claims

0Family size

Assignee

AGC GLASS EUROPE · BE

Inventors

Eric Tixhon · Louvain-la-Neuve, BE
Joseph Leclercq · Evere, BE
Eric Michel · Gosselies, BE

Key dates

Filing date	Jul 16, 2009
Grant date	Jun 17, 2014
Priority date	—
Expiry date	Jan 19, 2031

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC03C17/001
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

A process for depositing a film onto a substrate (2), which comprises in particular introducing a substrate (2) into a reaction chamber (6, 106, 206), in which at least two electrodes (10, 110, 210) are placed. A high-frequency electrical voltage is generated, said voltage being such that it generates filamentary plasma (12, 112, 212) between the two electrodes (10, 110, 210). An adjustable inductor (L) placed in parallel with the inductor of the installation generating the electrical voltage is employed so as to reduce the phase shift between the voltage and the current generated and to increase the time during which the current flows in the plasma (12, 112, 212).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.