Patent · US Active

Surface-modified middle layers

US8753797B2 · kind B2 · utility

9Cited by
1References
13Claims
0Family size

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Inventors

Key dates

Filing dateJul 6, 2012
Grant dateJun 17, 2014
Priority date—
Expiry dateJul 6, 2032

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG03F7/0046
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

Methods and materials for making a semiconductor device are described. The method includes providing a substrate, forming a surface-modified middle layer (SM-ML) that includes a fluorine-containing material over the substrate, forming a photoresist layer over the SM-ML, exposing the photoresist layer to an exposure energy, and developing the photoresist layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.