Methods and apparatuses for performing wafer level characterization of a plasmon element
US8753903B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 22, 2012 |
| Grant date | Jun 17, 2014 |
| Priority date | — |
| Expiry date | Aug 21, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/12
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Improved pump-probe testing methods and apparatuses for measuring the performance of a plasmon element at wafer level are provided. In one embodiment, the apparatus includes a light source configured to output a first light beam on a grating located at a first end of a waveguide, the waveguide being configured to couple energy of the first light beam to the plasmon element located at a second end of the waveguide, and an optical probe assembly positioned above a top surface of the wafer. The optical probe assembly is configured to direct a second light beam on an area of the wafer including the plasmon element and detect a portion of the second light beam reflected from the area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.