Method of manufacturing semiconductor light emitting device
US8753908B2 · kind B2 · utility
2Cited by
1References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 3, 2012 |
| Grant date | Jun 17, 2014 |
| Priority date | — |
| Expiry date | Jul 3, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0361
Abstract
There are disclosed a method of manufacturing a semiconductor light emitting device and a paste application apparatus. The method includes preparing a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; disposing a mask including an opening exposing a part of the light emitting structure on the light emitting structure; applying a paste including a wavelength conversion material to the light emitting structure through the opening of the mask, by using a pressure means; and planarizing the applied paste by using a roller.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.