Precursor composition for oxide semiconductor and method of manufacturing thin film transistor array panel using the same
US8753920B2 · kind B2 · utility
1Cited by
2References
17Claims
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Key dates
| Filing date | Aug 1, 2011 |
| Grant date | Jun 17, 2014 |
| Priority date | — |
| Expiry date | Aug 1, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02565
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a precursor composition for an oxide semiconductor. The precursor composition for the oxide semiconductor includes a metal complex compound formed by a metal ion and an organic ligand, wherein the precursor composition is represented by the following Formula 1.MAn (Formula 1)Herein, M is a metal ion, A is an organic ligand which includes α-substituted carboxylate, and n is a natural number.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.