Manufacturing method for semiconductor device
US8753921B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 9, 2011 |
| Grant date | Jun 17, 2014 |
| Priority date | — |
| Expiry date | Sep 9, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02631
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for producing a semiconductor device according to the present invention includes a step of sputtering a target (100A). The target (100A) includes a plurality of target tiles (11A) located while having a gap therebetween; a backing plate (15A) for supporting the plurality of target tiles (11A); and a bonding member (17A) provided between the backing plate (15A) and the plurality of target tiles (11A). The plurality of target tiles (11A) each contain In, Ga and Zn. When the target (100A) is seen in a direction normal thereto from the side on which the plurality of target tiles (11A) are located, the plurality of target tiles (11A) are each smaller than an insulating substrate (1), and the bonding member (17A) cannot be seen through the gap.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.