Double contacts for carbon nanotubes thin film devices
US8754393B2 · kind B2 · utility
10Cited by
2References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 14, 2012 |
| Grant date | Jun 17, 2014 |
| Priority date | — |
| Expiry date | Aug 14, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K10/486
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method of fabricating a semiconductor device is disclosed. A first contact layer of the semiconductor device is fabricated. An electrical connection is formed between a carbon nanotube and the first contact layer by electrically coupling of the carbon nanotube and a second contact layer. The first contact layer and second contact layer may be electrically coupled.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.