Miniature image sensor
US8754456B2 · kind B2 · utility
1Cited by
3References
13Claims
0Family size
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Key dates
| Filing date | Aug 3, 2009 |
| Grant date | Jun 17, 2014 |
| Priority date | — |
| Expiry date | May 16, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/809
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An image sensor including at least one photodiode and at least one transistor formed in and on a silicon substrate, the assembly of the photodiode and of the transistor being surrounded with a heavily-doped insulating wall, wherein the silicon substrate has a crystal orientation (110).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.